2010. 6. 17 1/3 semiconductor technical data ktc4520f triple diffused npn transistor revision no : 1 switching regulator application. high voltage switching application. features h excellent switching times. : t on =0.5 s(max.), t f =0.3 s(max.), at i c =2a. h high collector voltage : v ceo =500v. maximum rating (ta=25 ? ) dim millimeters to-220is 0.76+0.09/-0.05 a b c d e f g 0.5+0.1/-0.05 h 1.2+0.25/-0.1 1.5+0.25/-0.1 j k l m n p q r f q 1 2 3 l p n b g j m d n h e r k l s 0.5 typ s d a c 2.70 0.3 + _ 12.0 0.3 + _ 13.6 0.5 + _ 3.7 0.2 + _ 3.2 0.2 + _ 10.0 0.3 + _ 15.0 0.3 + _ 3.0 0.3 + _ 4.5 0.2 + _ 2.54 0.1 + _ + 2.6 0.2 _ 6.8 0.1 + _ 1. base 2. collector 3. emitter electrical characteristics (ta=25 ? ) characteristic symbol rating unit collector-base voltage v cbo 800 v collector-emitter voltage v ceo 500 v emitter-base voltage v ebo 7 v collector current dc i c 3 a pulse i cp 6 base current i b 1 a collector power dissipation (tc=25 ? ) p c 30 w junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =500v, i e =0 - - 10 a emitter cut-off current i ebo v eb =5v, i c =0 - - 10 a collector-emitter sustaning voltage v cex(sus) i c =1.5a, i b1 =-i b2 =0.6a l=2mh, clamped 500 - - v collector-emitter saturation voltage v ce(sat) i c =1.5a, i b =0.3a - - 1 v base-emitter saturation voltage v be(sat) i c =1.5a, i b =0.3a - - 1.5 v dc current gain h fe (1) (note) v ce =5v, i c =0.3a 15 - 50 h fe (2) v ce =5v, i c =1.5a 8 - - collector output capacitance c ob v cb =10v, i e =0, f=1mhz - 50 - pf transition frequency f t v ce =10v, i c =0.3a - 18 - mhz switching time turn on time t on - - 0.5 s storage time t stg - - 3 fall time t f - - 0.3 note : h fe (1) classification r:15 q 30, o:20 q 40, y:30 q 50
2010. 6. 17 2/3 ktc4520f revision no : 1 base-emitter voltage v (v) collector current 0 0 c i (a) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.8 1 2 3 4 be v =5v ce c collector current i (a) 0.02 0.1 10 0.01 be(sat) staturation voltage v , v 0.2 0.5 2 0.02 0.05 0.2 1 2 10 ce(sat), v v - i be(sat) c ce(sat) (v) 0.1 0.5 5 0.05 1 5 be(sat) v ce(sat) v 0.5 collector current i (a) h - i 200 dc current gain h 0.02 10 5 2 1 50 20 100 ce 0.1 v =5v cb i /i =5 0.05 0.2 fe 500 1000 c 12 10 5 fe 0.01 c collector-emitter voltage v (v) collector current 0 1 2 3 i (a) c 4 ce 12 3 4 5 6 7 8 910 5 i =500ma b i =400ma b i =300ma b i =200ma b i = 100ma b i =50ma b i =20ma b i = 0ma b i - v c ce collector current i (a) 1 0.001 collector-emitter voltage v (v) ce c 2 5 10 30 100 200 1000 500 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 i max. c (continuous) i max.(pulse)* c p =30w c *1 0ms *1ms *100 s *50 s * sinale nonrepetitive puls ta=25 c safe operating area collector current i (a) collector-emitter voltage v (v) 0.01 ce 10 c reverse bias safe operating area 20 50 100 200 500 1000 0.02 0.05 0.1 0.2 0.5 1 2 5 10 l=200 h i 2=-0.6a b cureves must be derated linearly with increase in temperature i - v cbe dc operation tc=25 c
2010. 6. 17 3/3 ktc4520f revision no : 1 switching time ( s) collector current i (a) 0.01 c 10 switching characteristics 0.2 0.5 1 2 5 10 0.02 0.05 0.1 0.2 0.5 1 2 5 10 collector power dissipation p (w) c ambient temperature ta ( c) 25 50 pc - ta 50 75 100 125 150 175 200 225 250 0 10 20 30 40 stg t on t t f
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